Poly-Diamond Gated Field-Emitter Display Cells
نویسندگان
چکیده
A microchip containing gated field-emitter display (FED) cells is designed and fabricated using vapor-deposited ptype polycrystalline diamond films and employing an integrated circuit (IC)-compatible diamond film technology on oxidized 4in Si wafers. Current–voltage (I V ) data, measured in a diode configuration at 10 6 torr, show Fowler–Nordheim (F–N) field emission behavior. A 1 4 pixel diamond gated display cell is demonstrated for the first time using phosphor-coated glass as an anode.
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